研究方向

2026-02-02

Nanoscale: Low-Temperature Growth of High-Quality Multilayer Graphene Films on Porous CuNi Alloys for Enhanced Corrosion Resistance

The atomically thin 2D nature of suspended graphene membranes holds promising in numerous technological applications. In particular, the outstanding transparency to electron beam endows graphene membranes great potential as a candidate for specimen support of transmission electron microscopy (TEM).

2025-11-24

AM: Graphene Liquid Cells for In Situ TEM: Unveiling Nanomaterial Growth and Etching

液体环境中纳米材料的生长与刻蚀过程会显著影响其尺寸、形貌和组成成分，从而决定其性能。为了以原子分辨实时可视化这些过程，原位液相透射电子显微成像技术得到了迅速发展，尤其是石墨烯液体池因其高分辨率、制备简便以及兼容常规透射电镜样品杆等特点，成为了强有力的研究平台。本综述首先总结了构筑石墨烯液体池的关键窗口材料——悬空石墨烯的制备方法，并介绍了多种类型的石墨烯液体池结构，在此基础上系统梳理了石墨烯液体池在揭示纳米材料生长与刻蚀过程中的具体应用。最后，本综述对基于石墨烯液体池研究所面临的机遇与挑战进行了展望，旨在为这一快速发展的研究领域提供全景式理解和最新进展的全面概述。图：用于透射电子显微镜原位观察
2025-11-17

AM: Trace Oxygen-Assisted Synthesis of High-Quality Graphene with Improved Electrical Performance

石墨烯的优异性能在实际应用中常因CVD制备过程中产生的点缺陷和非晶碳污染而大幅受限。现有研究多聚焦于污染去除或缺陷修复的单独问题，但二者的关联机制仍不清晰，也缺乏能同时实现清洁与修复的有效策略。此外，氧在石墨烯生长及缺陷修复中的具体作用长期存在争议，仍有待系统阐明。因此，本研究提出了一种痕量氧辅助的后处理策略，通过精准调控氧气的引入，同步实现石墨烯表面非晶碳污染的高效去除与晶格缺陷的快速修复。研究结合第一性原理计算与系统实验验证，揭示了氧气在蚀刻非晶碳和降低缺陷修复能垒方面的双重作用机制，成功将Stone-Wales缺陷的修复能垒从2.84 eV显著降低至0.36 eV。所制备的石墨烯薄膜展现
2024-11-10

2D Mater.: CVD graphene with high electrical conductivity: empowering applications

The wettability of graphene remains controversial owing to its high sensitivity to the surroundings, which is reflected by the wide range of reported water contact angle (WCA). Specifically, the surface contamination and underlying substrate would strongly alter the intrinsic wettability of graphene
2024-11-10

New growth frontier: superclean graphene

The last 10 years have witnessed significant progress in chemical vapor deposition (CVD) growth of graphene films. However, major hurdles remain in achieving the excellent quality and scalability of CVD graphene needed for industrial production and applications. Early efforts were mainly focused on increasing the single-crystalline domain size, large-area uniformity, growth rate, and controllability of layer thickness and on decreasing the defect concentrations. An important recent advance was t
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